SI2308DS-T1-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.6
0.5
T_J = 150 °C
0.4
0.3
I_D = 2.0 A
0.2
T_J = 25 °C
1
0
0.4
0.2
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
I_D = 250 µA
0.0
0.1
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
12
9
- 0.2
6
- 0.4
3
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
0.01
10- ⁴
Single Pulse
10- ³
10- ²
10- ¹
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
500
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70797.
www.vishay.com
4
Document Number: 70797
S09-0133-Rev. D, 02-Feb-09