SI2308DS-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET
Si2308DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
60
0.16 at V_GS = 10 V
0.22 at V_GS = 4.5 V
I_D (A)
2.0
1.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2308DS (A8)*
* Marking Code
Ordering Information: Si2308DS-T1
Si2308DS-T1-E3 (Lead (Pb)-free)
Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
2.0
1.6
A
Pulsed Drain Current^b
I_DM
10
Continuous Source Current (Diode Conduction)^a
I_S
1.0
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.80
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Ambient^c
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
Symbol
R_thJA
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70797
S09-0133-Rev. D, 02-Feb-09
Maximum
100
166
Unit
°C/W
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