SI1442DH Datasheet, PDF (4/12 Pages) Vishay Telefunken – N-Channel 12 V (D-S) MOSFET

New Product
Si1442DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.045
T_J = 150 °C
1
T_J = 25 °C
0.038
0.031
0.024
0.017
I_D = 6 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
0.010
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
0.65
20
I_D = 250 μA
0.5
15
10
0.35
5
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 μs
1 ms
1
10 ms
100 ms
10 s,1 s
0.1
DC
T_C = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63772
4
S12-0546-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000