SI1442DH Datasheet, PDF (1/12 Pages) Vishay Telefunken – N-Channel 12 V (D-S) MOSFET

New Product
N-Channel 12 V (D-S) MOSFET
Si1442DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
12
R_DS(on) () (Max.)
0.020 at V_GS = 4.5 V
0.024 at V_GS = 2.5 V
0.030 at V_GS = 1.8 V
I_D (A)^a
4
4
4
Q_g (Typ.)
13.1 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch and Battery Switch for Portable Devices
• DC/DC Converters
• Low On-Resistance for Low Voltage Drop
D
D2
G3
5D
4S
Top View
Ordering Information:
Si1442DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
AT XX
Lot Traceability
and Date Code
Part # Code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
12
V
V_GS
±8
T_F = 25 °C
4^a
Continuous Drain Current (T_J = 150 °C)
T_F = 70 °C
T_A = 25 °C
I_D
4^a
4^{a, b, c}
T_A = 70 °C
4^{a, b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_F = 25 °C
T_A = 25 °C
I_S
2.3
1.3^{b, c}
T_F = 25 °C
2.8
Maximum Power Dissipation
T_F = 70 °C
T_A = 25 °C
P_D
1.8
1.56^{b, c}
W
T_A = 70 °C
1^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T_F = 25 °C, package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 63772
For technical support, please contact: [e-mail]
www.vishay.com
S12-0546-Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000