J105 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel JFETs

J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
150
V_DS = 0 V
f = 1 MHz
120
Transconductance vs. Drain Current
200
V_GS(off) = –5 V
V_DS = 10 V
f = 1 kHz
100
90
C_iss
60
T_A = –55_C
10
125_C
25_C
C_rss
30
0
0
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
20
V_GS(off) = –5 V
10
V_DS = 10 V
f = 1 kHz
1
1
10
100
I_D – Drain Current (mA)
Noise Voltage vs. Frequency
100
V_DG = 10 V
T_A = –55_C
1
125_C
25_C
10
I_D = 10 mA
0.1
1
10
100
I_D – Drain Current (mA)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
300
30
g_fs and g_os @ V_DS = 10 V
V_GS = 0 V, f = 1 kHz
260
24
220
g_fs
18
g_os
180
12
140
6
100
0
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
0
–10
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7-4
1
10
100
1k
10 k
f – Frequency (Hz)
100 k
100 nA
10 nA
1 nA
100 pA
Gate Leakage Current
T_A = 125_C
100 mA
I_GSS @ 125_C
25 mA
T_A = 25_C
100 mA
25 mA
10 pA
I_GSS @ 25_C
1 pA
0
4
8
12
16
20
V_DG – Drain-Gate Voltage (V)
Document Number: 70230
S-04028—Rev. D, 04-Jun-01