J105 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel JFETs

J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10
2 .0
r_DS @ I_D = 10 mA, V_GS = 0 V
I_DSS @ V_DS = 10 V, V_GS = 0 V
8
1.6
On-Resistance vs. Drain Current
20
T_A = 25_C
16
6
r_DS
I_DSS
1.2
12
V_GS(off) = –3 V
4
0.8
2
0.4
0
0
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
10
I_D = 10 mA
r_DS changes X 0.7%/_C
8
0
–10
6
V_GS(off) = –3 V
–5 V
4
–8 V
2
0
–55 –35 –15 5 25 45 65 85 105 125
T_A – Temperature (_C)
Turn-On Switching
t_r approximately independent of I_D
V_DD = 1.5 V, R_G = 50 W
V_GS(L) = –10 V
8
4
0
10
–5 V
–8 V
100
I_D – Drain Current (mA)
1000
Output Characteristics
500
V_GS(off) = –5 V
V_GS = 0 V
400
–0.5 V
300
–1.0 V
–1.5 V
200
–2.0 V
100
–2.5 V
–3.0 V
0
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
Turn-Off Switching
20
t_d(off) independent of device V_GS(off)
V_DD = 1.5 V, V_GS(L) = –10 V
16
t_r
t_d(on) @ I_D = 30 mA
8
4
t_d(on) @ I_D = 10 mA
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
12
8
4
0
0
t_f
V_GS(off) = –8 V
t_d(off)
V_GS(off) = –3 V
10
20
30
40
50
I_D – Drain Current (mA)
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