IRF9Z20 Datasheet, PDF (4/7 Pages) International Rectifier – P-CHANNEL 50 VOLT POWER MOSFETs

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1.25
I_D = 1 mA
1.15
1.05
0.95
0.85
0.75
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
90121_08
T_J, Junction Temperature (°C)
Fig. 7 - Breakdown Voltage vs. Temperature
3.0 _{ID = - 9.7 A}
V_GS = - 10 V
2.4
1.8
1.2
0.6
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
90121_09
T_J, Junction Temperature (°C)
Fig. 8 - Normalized On-Resistance vs. Temperature
1000
800
600
400
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gs C_gd / (C_gs + C_gd)
≈ C_ds + C_gd
C_iss
C_oss
200
C_rss
0
1
2
5
10
2
5
10²
90121_10
Negative V_DS, Drain-to-Source Voltage (V)
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
IRF9Z20, SiHF9Z20
Vishay Siliconix
20 _{ID = - 9.7 A}
16
V_SD = - 40 V
12
8
4
For test circuit
see figure 17
0
0
8
16
24
32
40
90121_11
Q_G, Total Gate Charge (nC)
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
2.0
80 µs Pulse Test
1.6
1.2
V_GS = - 10 V
0.8
0.4
V_GS = - 20 V
0.0
0
90121_12
8
16
24
32
40
Negative I_D, Drain Current (A)
Fig. 11 - Typical On-Resistance vs. Drain Current
10
8
IRF9Z20, SiHF9Z20
6
IRF9Z22, SiHF9Z22
4
2
0
25
90121_13
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 12 - Maximum Drain Current vs. Case Temperature
S16-0015-Rev. C, 18-Jan-16
4
Document Number: 90121
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