IRF9Z20 Datasheet, PDF (2/7 Pages) International Rectifier – P-CHANNEL 50 VOLT POWER MOSFETs

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IRF9Z20, SiHF9Z20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R_thJA
R_thCS
R_thJC
TYP.
-
1.0
-
MAX.
80
-
3.1
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = -250 μA
-50
V_DS = V_GS, I_D = -250 μA
-2.0
V_GS = ± 20 V
-
V_DS = max. rating, V_GS = 0 V
-
V_DS = max. rating x 0,8, V_GS = 0 V, T_J =125°C -
V_GS = -10 V
I_D = -5.6 A ^b
-
V_DS = 2 x V_GS, I_DS = -5.6 A ^b
2.3
-
-
V
-
-4.0
V
- ± 500 nA
-
-250
μA
- -1000
0.20 0.28 
3.5
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Internal Source Inductance
L_S
Drain-Source Body Diode Characteristics
V_GS = 0 V,
-
V_DS = -25 V,
-
f = 1.0 MHz, see fig. 9
-
-
V_GS = -10 V
I_D = -9.7 A, V_DS = -0.8 max.
rating. see fig. 17
-
-
-
V_DD = -25 V, I_D = -9.7 A,
R_g = 18 , R_D = 2.4, see fig. 16 (MOSFET
-
switching times are essentially independent
-
of operating temperature)
-
Between lead,
D
-
6 mm (0.25") from
package and center of
die contact
G
-
S
480
-
320
-
pF
58
-
17
26
4.1
6.2
nC
5.7
8.6
8.2
12
57
86
ns
12
18
25
38
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
I_S
Pulsed Diode Forward Current ^a
I_SM
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
G
S
-
-
-9.7
A
-
-
-39
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = - 9.7 A, V_GS = 0 V ^b
-
-
-6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
Q_rr
56
110 280 ns
T_J = 25 °C, I_F = - 9.7 A, dI/dt = 100 A/μs ^b
0.17
0.34 0.85
μC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0015-Rev. C, 18-Jan-16
2
Document Number: 90121
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