IRF9640STRL Datasheet, PDF (4/10 Pages) Vishay Siliconix – Power MOSFET

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
2400
2000
1600
1200
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
800
400
0
10⁰
91087_05
C_oss
C_rss
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
150 °C
10⁰
25 °C
10^-1
0.0
91087_07
V_GS = 0 V
1.0
2.0
3.0
4.0
5.0
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I_D = - 11 A
16
V_DS = - 160 V
V_DS = - 100 V
12
V_DS = - 40 V
8
4
0
0
91087_06
For test circuit
see figure 13
10
20
30
40
50 60
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10²
Operation in this area limited
5
by R_DS(on)
10 µs
2
100 µs
10
5
1 ms
2
1
1
91087_08
T_C = 25 °C
T_J = 150 °C
Single Pulse
10 ms
2
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91087
S11-1052-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000