IRF9640STRL Datasheet, PDF (1/10 Pages) Vishay Siliconix – Power MOSFET

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 200
V_GS = - 10 V
0.50
Q_g (Max.) (nC)
44
Q_gs (nC)
7.1
Q_gd (nC)
27
Configuration
Single
S
I²PAK (TO-262)
D²PAK (TO-263)
G
DS
G
D
S
G
D
P-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9640S-GE3
Lead (Pb)-free
IRF9640SPbF
SiHF9640S-E3
Note
a. See device orientation.
D²PAK (TO-263)
-
IRF9640STRLPbF^a
SiHF9640STL-E3^a
D²PAK (TO-263)
-
IRF9640STRRPbF^a
SiHF9640STR-E3^a
I²PAK (TO-262)
SiHF9640L-GE3
IRF9640LPbF
SiHF9640L-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 50 V, starting T_J = 25 °C, L = 8.7 mH, R_g = 25 , I_AS = - 11 A (see fig. 12).
c. I_SD  - 11 A, dI/dt  150 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 11
- 6.8
- 44
1.0
0.025
700
- 11
13
125
3.0
- 5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91087
S11-1052-Rev. D, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000