IRF9510STRLPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Power MOSFET

IRF9510S, SiHF9510S
Vishay Siliconix
350
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
280
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
210
140
C_oss
70
0
10⁰
91073_05
C_rss
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
175 °C
10⁰
25 °C
10^-1
1.0
91073_07
V_GS = 0 V
2.0
3.0
4.0
5.0
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I_D = 8.0 A
16
V_DS = 400 V
V_DS = 250 V
12
V_DS = 100 V
8
4
0
0
91071_06
For test circuit
see figure 13
15
30
45
60
75
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10²
Operation in this area limited
5
by R_DS(on)
2
10 µs
10
100 µs
5
2
1
5
2
0.1
0.1 ²
91071_08
1 ms
10 ms
5
2
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
5 ₁₀ 2 5 ₁₀₂ 2
5 ₁₀₃ 2
V_DS, Drain-to-Source Voltage (V)
5 ₁₀₄
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91073
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000