IRF830B Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

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100
10
T_J = 150 °C
T_J = 25 °C
1
V_GS = 0 V
0.1
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
V_SD, Source-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
Operation in this area
limited by R_DS(on)
10
100 μs
1
Limited by R_DS(on)*
1 ms
0.1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.01
10 ms
BVDSS Limited
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 8 - Maximum Safe Operating Area
IRF830B
Vishay Siliconix
6
5
4
3
2
1
0
25
50
75
100
125
150
T_J, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
625
600
575
550
525
500
475
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S16-0109-Rev. B, 25-Jan-16
4
Document Number: 91520
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