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IRF830B Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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IRF830B
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
1.5
20
3
5
Single
TO-220AB
S
D
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
• Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer electronics
- Displays (LCD or plasma TV)
• Server and telecom power supplies
- SMPS
• Industrial
- Welding
- Induction heating
- Motor drives
• Battery chargers
TO-220AB
IRF830BPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A.
c. 1.6 mm from case.
d. ISD  ID, starting TJ = 25 °C.
LIMIT
500
± 30
30
5.3
3.4
10
0.83
28.8
104
-55 to +150
24
0.28
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S16-0109-Rev. B, 25-Jan-16
1
Document Number: 91520
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000