DG642DJ-E3 Datasheet, PDF (4/18 Pages) Vishay Siliconix – Low On-Resistance Wideband/Video Switches

DG641, DG642, DG643
Vishay Siliconix
SPECIFICATIONS (for DG642)
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V_INH = 2.4 V, V_INL = 0.8 V^e
Limits
- 40 °C to 85 °C
Temp.^a Min.^b Typ.^c Max.^b Unit
Analog Signal Range^d
V_ANALOG
V- = - 5 V, V+ = 12 V
V- = GND V, V+ = 12 V
Full
-5
Full
0
8
V
8
Drain-Source On-Resistance
R_DS(on) Match
Source Off Leakage Current
R_DS(on)
R_DS(on)
I_S(off)
I_S = - 10 mA, V_D = 0 V
V_S = 0 V, V_D = 10 V
Room
5
8
Full
9

Room
0.5
1
Room - 10
- 0.04
10
Full - 200
200
Drain Off Leakage Current
I_D(off)
V_S = 10 V, V_D = 0 V
Room
Full
- 10
- 200
- 0.04
10
200
nA
Channel On Leakage Current
I_D(on)
V_S = V_D = 0 V
Room - 10
- 0.2
10
Full - 200
200
Digital Control
Input Voltage High
Input Voltage Low
Input Current
V_INH
V_INL
I_IN
V_IN = GND or V+
Full
2.4
Full
V
0.8
Room
-1
0.05
Full
- 20
1
20
µA
Dynamic Characteristics
On State Input Capacitance^d
Off State Input Capacitance^d
Off State Output Capacitance^d
Bandwidth
Turn On Time
Turn Off Time
C_S(on)
C_S(off)
C_D(off)
BW
t_ON
t_OFF
V_S = V_D = 0 V
V_D = 0 V
V_S = 0 V
R_L = 50 see figure 6
R_L = 1 kC_L = 35 pF
see figure 2
Room
Room
Room
Room
Room
Full
Room
Full
19
40
8
20
pF
8
20
500
MHz
60
100
160
40
60
ns
100
Charge Injection
Q
C_L = 1000 pF, V_D = 0 V
see figure 3
Room
- 40
pC
Off Isolation
All Hostie Crosstalk
R_IN = 75 R_L = 75 
f = 5 MHz, see figure 4
Room
- 63
dB
X_TALK(AH)
R_IN = 10 , R_L = 75 
f = 5 MHz, see figure 5
Room
- 85
Power Supplies
Positive Supply Current
Negative Supply Current
I+
Room
Full
3.5
6
9
I-
V_IN = 0 V or V_IN = 5 V
Room
-6
-3
Full
-9
mA
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V_IN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70058
S11-0154-Rev. F, 31-Jan-11