DG642DJ-E3 Datasheet, PDF (2/18 Pages) Vishay Siliconix – Low On-Resistance Wideband/Video Switches

DG641, DG642, DG643
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
DG641
- 40 °C to 85 °C
DG642
- 40 °C to 85 °C
DG643
- 40 °C to 85 °C
Package
16-Pin Plastic DIP
16-Pin Narrow SOIC
8-Pin Plastic DIP
8-Pin Narrow SOIC
16-Pin Plastic DIP
16-Pin Narrow SOIC
Part Number
DG641DJ
DG641DY
DG642DJ
DG642DY
DG643DJ
DG643DY
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
V+ to V-
- 0.3 to 21
V+ to GND
- 0.3 to 21
V- to GND
Digital Inputs
V_S, V_D
Continuous Current (Any terminal except S or D)
- 19 to + 0.3
(V-) - 0.3 V to (V+) + 0.3 V
V
or 20 mA, whichever occurs first
(V-) - 0.3 V to (V+) + 14 V
or 20 mA, whichever occurs first
20
Continuous Current S or D
DG641, DG643
DG642
75
100
mA
Current, S or D
DG641, DG643
200
(Pulsed at 1 ms, 10 % duty cycle max) _DG642
300
Storage Temperature
Power Dissipation (Package)^b
8-Pin Plastic DIP and Narrow SOIC^c
16-Pin Plastic DIP^d
16-Pin Narrow SOIC^e
- 65 to 125
°C
300
470
mW
600
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7.6 mW/°C above 75 °C.
d. Derate 6 mW/°C above 75 °C.
e. Derate 80 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
V+
GND
5V
Reg
S
IN
D
V-
www.vishay.com
2
Figure 1.
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11