English
Language : 

DG444 Datasheet, PDF (4/9 Pages) Intersil Corporation – Monolithic, Quad SPST, CMOS Analog Switches
DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Temnperature
80
V+ = 15 V
70
V– = –15 V
60
50
85_C
40
25_C
30
20
–40_C
0_C
10
Crosstak and Off Isolation vs. Frequency
–140
–120
–100
Crosstalk
–80
–60
Off Isolation
–40
V+ = 15 V
–20
V– = –15 V
Ref. 10 dBm
0
–15
–10
–5
0
5
10
15
VD – Drain Voltage (V)
0
100
1k
10 k
100 k
1M
10 M
f – Frequency (Hz)
Charge Injection vs. Source Voltage
50
Switching Threshold vs. Supply Voltage
40
CL = 1 nF
4
30
20
10
0
–10
–20
–30
–10
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–5
0
5
10
VS – Source Voltage (V)
Source/Drain Leakage Currents
20
IS(off) , ID(off)
0
3
VL = 7 V
2
1
0
0
10
VL = 5 V
4
8
12
16
20
VSUPPLY (V)
Source/Drain Leakage Currents
(Single 12-V Supply)
IS(off), ID(off)
0
–20
ID(on)
–40
–60
V+ = 15 V
–80
V– = –15 V
For I(off), VD = –VS
–100
–15 –10
–5
0
5
10
15
VD or VS – Drain or Source Voltage (V)
–10
IS(on) + ID(on)
–20
–30
–40
0
V+ = 12 V
V– = 0 V
For ID, VS = 0 V
For IS, VD = 0 V
2
4
6
8
10
12
VD or VS – Drain or Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70054
S-52433—Rev. F, 06-Sep-99