DG2599 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Low Voltage, Dual DPDT in miniQFN16

DG2599
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
100
V+ = 3 V
80
60
40
I_COM(off)
I_COM(on)
20
0
- 20
I_NC(off)
- 40
- 60
- 80
- 100
0
0.5
1.0
1.5
2.0
2.5
3.0
Analog Voltage (V)
Leakage vs. Analog Voltage
50
45
40
t_OFF V+ = 3 V
35
t_ON V+ = 3 V
30
25
t_ON V+ = 4.3 V
20
15
t_OFF V+ = 4.3 V
10
5
0
- 60
- 40 - 20 0 20 40 60 80 100
Temperature (°C)
(NO) Switching Time vs. Temperature
80
70
t_ON V+ = 3 V
60
50
t_ON V+ = 4.3 V
40
30
20
t_OFF V+ = 3 V
t_OFF V+ = 4.3 V
10
0
- 60
- 40 - 20 0 20 40 60 80 100
Temperature (°C)
(NC) Switching Time vs. Temperature
10
0
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
- 100
- 110
- 120
- 130
100K
Loss
OIRR
Xtalk NC/NO
Xtalk Ch3/C
V+ = 3 V
R_L = 50 Ω
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off Isolation and Crosstalk
0.9
0.85
T_A = 25 °C
0.8
0.75
0.7
V_INH
V_INL
0.65
0.6
0.55
0.5
0.45
0.4
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
www.vishay.com
Document Number: 67667
4
S11-1029-Rev. C, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000