DG2599 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low Voltage, Dual DPDT in miniQFN16

DG2599
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Reference to GND
V+
IN, COM, NC, NO^a
- 0.3 to 5
V
- 0.3 to (V+ + 0.3)
Current (any terminal except NO, NC or COM)
30
Continuous Current (NO, NC, or COM)
± 300
mA
Peak Current (pulsed at 1 ms, 10 % duty cycle)
± 500
Storage Temperature (D Suffix)
Package Solder Reflow Conditions^d
Power Dissipation (Packages)^b
miniQFN16
miniQFN16^c
- 65 to 150
°C
250
525
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.6 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guar-
anteed and is not required to ensure adequate bottom side solder interconnection.
ELECTRICAL CHARACTERISTICS (V+ = 3 V)
Parameter
Power Supply and Signal
V+ Supply Voltage
Test Conditions
Temp.
Full
V+ Supply Current
Analog Signal Range
Switch On-Resistance and Leakage
Drain-Source On-Resistance
V_IN = 0 or V+
Full
Full
Room
V+ = 3 V, I_NO/NC = 100 mA, V_COM = 0.9 V, 2.3 V _Full
On-Resistance Flatness
V+ = 3 V, I_NO/NC = 100 mA, V_COM = 0 to V+
Room
Full
Switch Off Leakage Current
Room
V+ = 4.3 V, V_NO/NC = 0.3 V/4 V, V_COM = 4 V / 0.3 V _Full
Channel On-Leakage Current
V+ = 4.3 V, V_NO/NC and V_COM = 0.3 V / 4 V
Room
Full
Digital Control
Input, High Voltage
Input, Low Voltage
V+ = 4.3 V
Full
V+ = 3 V
V+ = 4.3 V
Full
V+ = 3 V
Input, Bias Current
Dynamic Characteristics
Turn On-Time
V_IN = V+
Full
V_COM or V_NO/NC = 3 V, R_L = 50 , C_L = 35 pF
Room
Full
Turn Off-Time
V_COM or V_NO/NC = 3 V, R_L = 50 , C_L = 35 pF
Room
Full
Break Before Make Time
Charge Injection
Off Isolation
Crosstalk
3dB Bandwith
Source Off Capacitance
Channel On Capacitance
V_COM or V_NO/NC = 3 V, R_L = 50 , C_L = 35 pF
C_L = 1 nF, R_GEN = 0 
R_L = 50 , C_L = 5 pF, f = 1 MHz
R_L = 50 , C_L = 5 pF, f = 1 MHz
Non-adjacent channels
C_L = 5 pF, R_L = 50 
V_IN = 0 or V+, f = 1 MHz
V_IN = 0 or V+, f = 1 MHz
Room
Full
Room
Min.
1.65
0
- 10
- 100
- 10
- 100
1.6
1.3
-1
2
2
Typ.
0.001
2.8
0.24
0.1
0.1
0.01
± 10
- 66
- 110
186
9
26
Max.
5
2
V+
3.3
3.6
1.1
1.3
10
100
10
100
0.6
0.5
1
90
115
70
85
Unit
V
µA
V

nA
V
µA
ns
pC
dB
MHz
pF
www.vishay.com
Document Number: 67667
2
S11-1029-Rev. C, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000