DG213DJ-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Quad Complementary CMOS Analog Switch

DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r_DS(on) vs. V_D and Power Supply Voltages
110
100
r_DS(on) vs. V_D and Temperature
100
V+ = 15 V
90
V– = –15 V
90
80
"5 V
80
70
70
60
125_C
60
"10 V
50
85_C
50
"15 V
40
25_C
40
30
–55_C
"20 V
30
20
20
10
10
–20 –16 –12 –8 –4 0 4 8
V_D – Drain Voltage (V)
12 16 20
0
–15 –10
–5
0
5
10
15
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Single Power Supply Voltages
300
250
5V
V– = 0 V
V_L = 5 V
200
150
7V
10 V
100
12 V
50
0
0
2
4
6
8
10
12
V_D – Drain Voltage (V)
Leakage Currents vs. Analog Voltage
40
V+ = 22 V
30
V– = –22 V
T_A = 25_C
20
I_D(on)
10
0
I_S(off), I_D(off)
–10
–20
–30
–40
–20 –15 –10 –5
0
5 10 15 20
V_ANALOG – Analog Voltage (V)
Leakage Current vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
V_S, V_D = "14 V
100 pA
10 pA
I_S(off), I_D(off)
1 pA
–55 –35 –15 5
25 45 65
Temperature (_C)
85 105 125
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4-4
Q_S, Q_D – Charge Injection vs. Analog Voltage
30
20
10
V+ = 15 V
0 V– = –15 V
–10
V+ = 12 V
V– = 0 V
–20
–30
–15 –10
–5
0
5
10
15
V_ANALOG – Analog Voltage (V)
Document Number: 70662
S-00787—Rev. F, 17-Apr-00