DG213DJ-E3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Quad Complementary CMOS Analog Switch

DG213
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs^a V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIP^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin TSSOP^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range^d
Drain-Source On-Resistance
r_DS(on) Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^e
Temp^a
D Suffix
–40 to 85_C
Min^c Typ^b Max^c
Unit
V_ANALOG
r_DS(on)
Dr_DS(on)
I_S(off)
I_D(off)
I_D(on)
V_D = "10 V, I_S = 1 mA
V_S = "14 V, V_D = #14 V
V_D = "14 V, V_S = #14 V
V_S = V_D = 14 V
Full
V–
V+
V
Room
Full
Room
45
60
85
W
1
2
Room
–0.5
"0.01
0.5
Full
–5
5
Room
–0.5
"0.01
Full
–5
0.5
5
nA
Room
–0.5
"0.02
0.5
Full
–10
10
V_INH
V_INL
I_INH or I_INL
C_IN
t_ON
t_OFF
t_D
Q
C_S(off)
C_D(off)
C_D(on)
OIRR
X_TALK
V_INH or V_INL
V_S = 10 V
See Figure 2
V_S = 10 V, See Figure 3
C_L = 1000 pF, V_g= 0 V, R_g = 0 W
V_S = 0 V, f = 1 MHz
V_D = V_S = 0 V, f = 1 MHz
C_L = 15 pF, R_L = 50 W
V_S = 1 V_RMS, f = 100 kHz
Full
2.4
Full
Full
–1
Room
Room
Room
Room
15
Room
Room
Room
Room
Room
Room
V
0.8
1
mA
5
pF
85
130
55
100
ns
25
1
pC
5
5
pF
16
90
dB
95
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Document Number: 70662
S-00787—Rev. F, 17-Apr-00