CNY75GB Datasheet, PDF (4/12 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

CNY75(G) Series
Vishay Semiconductors
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Output (Detector)
Test Conditions
Symbol
Value
Unit
I_si
130
mA
Parameters
Power dissipation
Coupler
Test Conditions
Symbol
Value
Unit
T_amb ≤ 25°C
P_si
265
mW
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
Value
Unit
V_IOTM
6
kV
T_si
150
°C
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Partial discharge test voltage – 100%, t_test = 1 s
V_pd
Routine test
Partial discharge test voltage – t_Tr = 60 s, t_test = 10 s,
Lot test (sample test)
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V,
T_amb ≤ 100°C
V_IO = 500 V,
T_amb ≤ 150°C
V_IOTM
V_pd
R_IO
R_IO
R_IO
(construction test only)
275
250
225
P_si (mW)
VIOTM
V
200
175
150
VPd
125
VIOWM
100
VIORM
75
I_si (mA)
50
25
0
0
95 10923
25 50 75 100 125 150 175
T_amb – Ambient Temperature ( °C )
0
t1
13930
Min. Typ. Max. Unit
1.6
kV
6
kV
1.3
kV
10¹²
W
10¹¹
W
10⁹
W
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4 (12)
Rev. A4, 11–Jan–99