BF998_08 Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF998/BF998R/BF998RW
Vishay Semiconductors
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
96 12159
T_amb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
20
V_DS = 8 V
16
12
5V ^{4V 3V}
2V
1V
8
0
4
V_G1S = - 1 V
0
- 0.6 - 0.2 0.2 0.6 1.0 1.4
12817
V_G2S - Gate 2 Source Voltage (V)
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
V_G2S = 4 V
25
20
V_G1S = 0.6 V
0.4 V
15
0.2 V
10
0
5
- 0.2 V
0
0
12812
- 0.4 V
2
4
6
8
10
V_DS - Drain Source Voltage (V)
Figure 2. Drain Current vs. Drain Source Voltage
3.0
V_DS = 8 V
2.5
V_G2S = 4 V
f = 1 MHz
2.0
1.5
1.0
0.5
0.0
- 2 - 1.5 - 1 - 0.5 0 0.5 1.0 1.5
12863
V_G1S - Gate 1 Source Voltage (V)
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
20
V_DS = 8 V 6 V
16
5V
4V
12
3V
2V
1V
8
4
0
0
- 0.8 - 0.4 0.0
V_G2S = - 1 V
0.4 0.8 1.2
12816
V_G1S - Gate 1 Source Voltage (V)
Figure 3. Drain Current vs. Gate 1 Source Voltage
3.0
V_G2S = 4 V
2.5
f = 1 MHz
2.0
1.5
1.0
0.5
0.0
2
4
6
8
10
12
12864
V_DS - Drain Source Voltage (V)
Figure 6. Output Capacitance vs. Drain Source Voltage
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4
Document Number 85011
Rev. 1.8, 05-Sep-08