BF998_08 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Not for new design, this product will be obsoleted soon
BF998/BF998R/BF998RW
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• Low noise figure
e3
• Low feedback capacitance
• High cross modulation performance
• Low input capacitance
• High AGC-range
• High gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Input and mixer stages in UHF tuners
2
1
SOT143
3
4
1
2
SOT143R
4
3
12
SOT343R
43
19216
Electrostatic sensitive device.
Observe precautions for handling.
Mechanical Data
Typ: BF998
Case: SOT143 Plastic case
Weight: approx. 8.0 mg
Marking: MO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998R
Case: SOT143R Plastic case
Weight: approx. 8.0 mg
Marking: MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998RW
Case: SOT343R Plastic case
Weight: approx. 6.0 mg
Marking: WMO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Parts Table
Part
BF998
BF998A
BF998R
BF998RA
BF998RW
BF998RAW
BF998RBW
Ordering code
BF998A-GS08
BF998A-GS08
BF998RA-GS08
BF998RA-GS08
BF998RAW-GS08 or
BF998RBW-GS08
BF998RAW-GS08
BF998RBW-GS08
Type Marking
MO
MO
MOR
MOR
WMO
WMO
WMO
Remarks
SOT143
SOT143
SOT143R
SOT143R
SOT343R
SOT343R
SOT343R
Document Number 85011
Rev. 1.8, 05-Sep-08
www.vishay.com
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