72342 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Low Voltage, Dual DPDT and Quad SPDT Analog Switches

DG2018, DG2019
Vishay Siliconix
SPECIFICATIONS V+ = 5 V
Parameter
Analog Switch
Test Conditions
Limits
Otherwise Unless Specified
- 40 °C to 85 °C
V+ = 5 V, ± 10 %,
(DG2018 Only) V_IN = 0.8 or 1.8 V^e
Symbol ^{(DG2019 Only) V}L ^{= 1.5 V, V}IN ^{= 0.4 or 1.0 Ve} Temp.^a Min.^b Typ.^c Max.^b Unit
Analog Signal Range^d
V_NO, V_NC,
V_COM
Full
0
V+
V
On-Resistance
R_ON
V+ = 4.5 V, V_COM = 3 V, I_NO, I_NC = 10 mA
Room
Full
4
8
10
R_ON Flatness
R_ON Match Between Channels
R_ON
Flatness
ΔR_ON
V+ = 4.5 V
V_COM = 0 to V+, I_NO, I_NC = 10 mA
Room
Room
0.6
1.2
Ω
0.6
1.2
Switch Off Leakage Current^f
I_NO(off)
I_NC(off)
I_COM(off)
V+ = 5.5 V
Room - 1
Full - 10
0.03
1
10
V_NO, V_NC = 1 V/4.5 V, V_COM = 4.5 V/1 V
Room - 1
Full - 10
0.03
1
10
nA
Channel-On Leakage Current^f
I_COM(on)
V+ = 5.5 V, V_NO, V_NC = V_COM = 1 V/4.5 V
Room - 1
Full - 10
0.03
1
10
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
DG2018 Full
1.8
V_L = 1.5 V
DG2019 Full
1.0
DG2018 Full
V
0.8
V_L = 1.5 V
DG2019 Full
0.4
Full
9
pF
V_IN = 0 or V+
Full
1
1
µA
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
Off-Isolation^d
Crosstalk^d
Bandwidth^d
Source-Off Capacitance^d
Channel-On Capacitance^d
Power Supply
t_ON
t_OFF
t_d
Q_INJ
V_NO or V_NC = 3 V, R_L = 300 Ω, C_L = 35 pF
Room
Full
Room
Full
44
48
52
19
33
ns
35
V_NO or V_NC = 3 V, R_L = 50 Ω, C_L = 35 pF
Full
1
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 Ω
Room
- 2.46
pC
OIRR
Room
- 67
dB
X_TALK
R_L = 50 Ω, C_L = 5 pF, f = 1 MHz
Room
- 72
BW
Room
180
MHz
C_NO(off)
Room
7.5
C_NC(off)
C_NO(on)
Room
7.5
V_IN = 0 or V+, f = 1 MHz
Room
30
pF
C_NC(on
Room
30
Power Supply Range
V+
Power Supply Current
I+
V_IN = 0 or V+
1.8
5.5
V
Full
0.01 1.0 µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V_IN = input voltage to perform proper function.
f. Not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72342
S-82626-Rev. C, 03-Nov-08