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71090 Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
30
0.6
25
ID = 250 mA
0.4
20
Single Pulse Power
0.2
15
0.0
10
â0.2
5
â0.4
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
10â3
10â2
10â1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10â4
10â3
www.vishay.com
4
10â2
10â1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71090
S-40424âRev. C, 15-Mar-04
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