71090 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si3455ADV
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −30 V, V_GS = 0 V
V_DS = −30 V, V_GS = 0 V, T_J = 85_C
V_DS v −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −3.5 A
V_GS = −4.5 V, I_D = −2.7 A
V_DS = −15 V, I_D = −3.5 A
I_S = −1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −15 V, V_GS = −10 V, I_D = −3.5 A
V_DD = −15 V, R_L = 15 W
I_D ^ −1 A, V_GEN = −10 V, R_g = 6 W
I_F = −1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
−1.0
−3.0
V
"100
nA
−1
mA
−5
−20
A
0.080
0.100
W
0.140
0.170
6
S
−0.8
−1.2
V
8.5
13
2.2
nC
1.5
10
20
7
15
20
35
ns
10
20
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 7 V
6V
16
5V
12
8
4V
4
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
20
T_C = −55_C
16
25_C
12
125_C
8
4
0
0
1
2
3
4
5
6
7
V_GS − Gate-to-Source Voltage (V)
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2
Document Number: 71090
S-40424—Rev. C, 15-Mar-04