30ETH06FP-F3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED Pt®

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New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
Vishay Semiconductors
180
160
140
120
DC
100
80
60
Square wave (D = 0.50)
40 Rated V_R applied
20 _{See note (1)}
0
0
5 10 15 20 25 30 35
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
90
80
RMS limit
70
60
50
40
30
20
10
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0 5 10 15 20 25 30 35 40 45
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
90
I_F = 30 A
80
I_F = 15 A
70
60
50
40
30
20 _{VR = 200 V}
10 ^{TJ = 125 °C}
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
1200
1000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
800
I_F = 30 A
600
I_F = 15 A
400
200
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 16-Nov-11
4
Document Number: 93403
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