30ETH06FP-F3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED Pt®

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VS-30ETH06FP-F3, VS-30ETH06FP-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
28
Reverse recovery time
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
23
t_rr
T_J = 25 °C
-
31
T_J = 125 °C
-
77
Peak recovery current
T_J = 25 °C
I_F = 30 A
-
3.5
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
7.7
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
65
-
345
MAX.
35
30
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Thermal resistance,
junction to ambient per leg
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220 FULL-PAK
MIN.
- 65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
-
2.85
-
70
0.2
-
2
-
0.07
-
12
-
(10)
30ETH06FP
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 16-Nov-11
2
Document Number: 93403
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