30CTH02PBF_12 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 x 15 FRED Pt®

VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3
www.vishay.com
Vishay Semiconductors
180
170
DC
160 Square wave (D = 0.50)
Rated V_R applied
150
See note (1)
140
0
5
10
15
20
25
I_F(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
170
160
150
DC
140
130
Square wave (D = 0.50)
120 _{Rated VR applied}
110 See note (1)
100
0
5
10
15
20
25
I_F(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
1000
25
RMS limit
20
15
10
5
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0
0
5
10
15
20
25
I_F(AV) - Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
100
I_F = 15 A
V_R = 160 V
T_J = 125 °C
T_J = 25 °C
10
100
1000
dI_F/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI_F/dt
I_F = 15 A
100
10
100
V_R = 160 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 8); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 02-Jan-12
4
Document Number: 94014
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000