30CTH02PBF_12 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 x 15 FRED Pt®

VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
-
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
-
-
26
T_J = 125 °C
I_F = 15 A
-
40
dI_F/dt = 200 A/μs
I_RRM
T_J = 25 °C
V_R = 160 V
-
2.8
T_J = 125 °C
-
6.0
T_J = 25 °C
Q_rr
T_J = 125 °C
-
37
-
120
MAX.
35
30
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
per diode
junction to case
(FULL-PAK) per diode
R_thJC
Mounting surface, flat, smooth
and greased
Marking device
Case style TO-220AB
Case style TO-220 FULL-PAK
MIN.
- 65
-
-
TYP. MAX. UNITS
-
175
°C
-
1.1
-
3.5
30CTH02
30CTH02FP
°C/W
100
T_J = 175 °C
10
T_J = 125 °C
T_J = 25 °C
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
0.001
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
0.0001
0
50
100
150
200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
2
Document Number: 94014
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000