20ETF02SPBF Datasheet, PDF (4/8 Pages) Vishay Siliconix – Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A

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1000
100
10
T_J = 25 °C
T_J = 150 °C
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
0.05
I_FM = 30 A
20ETF.. Series
T_J = 25 °C
I_FM = 20 A
I_FM = 10 A
I_FM = 5 A
I_FM = 1 A
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T_J = 25 °C
0.5
20ETF.. Series
T_J = 150 °C
0.4
I_FM = 30 A
0.3
I_FM = 20 A
I_FM = 10 A
I_FM = 5 A
0.2
I_FM = 1 A
0.1
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T_J = 150 °C
VS-20ETF..SPbF Series
Vishay Semiconductors
4.0
20ETF.. Series
3.5
T_J = 25 °C
3.0
2.5
I_FM = 30 A
I_FM = 20 A
2.0
I_FM = 10 A
1.5
1.0
0.5
0
0
I_FM = 5 A
I_FM = 1 A
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T_J = 25 °C
10
9
20ETF.. Series
T_J = 150 °C
8
I_FM = 30 A
7
6
I_FM = 20 A
5
4
I_FM = 10 A
3
2
I_FM = 5 A
1
I_FM = 1 A
0
0
200
400 600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T_J = 150 °C
70
20ETF.. Series
60 T_J = 25 °C
50
40
30
20
I_FM = 30 A
I_FM = 20 A
I_FM = 10 A
I_FM = 5 A
10
0
0
I_FM = 1 A
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T_J = 25 °C
Revision: 17-Aug-11
4
Document Number: 94097
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