20ETF02SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A

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VS-20ETF..SPbF Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
V_FM
r_t
V_F(TO)
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
60 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Snap factor
S
TEST CONDITIONS
I_F at 20 Apk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
I_FM
t_rr
t_a t_b
dir
t
dt
Q_rr
I_RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
T_J, T_Stg
R_thJC
DC operation
Maximum thermal resistance
junction to ambient (PCB mount)
R_thJA ⁽¹⁾
Soldering temperature
T_S
Approximate weight
Marking device
Case style TO-263AB (D²PAK)
Note
(1) _{When mounted on 1" square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.}
For recommended footprint and soldering techniques refer to application note #AN-994.
VALUES
- 40 to 150
UNITS
°C
0.9
°C/W
40
240
°C
2
g
0.07
oz.
20ETF02S
20ETF04S
20ETF06S
Revision: 17-Aug-11
2
Document Number: 94097
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