VT1060C-M3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

VT1060C-M3, VIT1060C-M3, VT1060CHM3, VIT1060CHM3
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
10
8
6
4
2
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
4.0
D = 0.5 ^{D = 0.8}
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0
D = 0.1
D = 1.0
1.5
T
1.0
0.5
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 15-Dec-16
3
Document Number: 89232
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