VT1060C-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

VT1060C-M3, VIT1060C-M3, VT1060CHM3, VIT1060CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.39 V at I_F = 2.5 A
TO-220AB
TMBS ^®
TO-262AA
K
3
2
1
3
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VT1060C
PIN 1
PIN 2
PIN 3
CASE
VIT1060C
PIN 1
PIN 2
PIN 3
K
TYPCIAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 5.0 A
V_RRM
60 V
I_FSM
V_F at I_F = 5.0 A
100 A
0.50 V
T_J max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Dual common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rate of change (rated V_R)
dV/dt
Operating junction and storage temperature range
T_J, T_STG
VT1060C
VIT1060C
60
10
5
100
10 000
-55 to +150
UNIT
V
A
A
V/μs
°C
Revision: 15-Dec-16
1
Document Number: 89232
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000