VSB3200_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

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VSB3200
Vishay General Semiconductor
10
T_A = 150 °C
1
T_A = 125 °C
0.1
T_A = 100 °C
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
0.01
0
T_A = 25 °C
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
1
0.1
0.01
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
100
Junction to Lead
10
0.001
T_A = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Revision: 14-Aug-13
3
Document Number: 89144
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