VSB3200_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

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VSB3200
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS^®
DO-201AD
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 3.0 A
T_J max.
Package
3.0 A
200 V
90 A
0.63 V
150 °C
DO-201AD
Diode variation
Single
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
V_RRM
200
I_F(AV) ⁽¹⁾
3.0
I_FSM
90
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
10 000
- 40 to + 150
Note
(1) _{Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air}
UNIT
V
A
A
V/μs
°C
Revision: 14-Aug-13
1
Document Number: 89144
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000