VSB3200S Datasheet, PDF (3/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
VSB3200S
Vishay General Semiconductor
10
T_A = 150 °C
T_A = 125 °C
1
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
100
T_A = 150 °C
1
T_A = 125 °C
0.1
10
0.01
0.001
T_A = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1
0.01
Junction to Ambient
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Document Number: 89143 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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