VSB3200S Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

VSB3200S
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage ⁽¹⁾
Reverse current per diode ⁽²⁾
Typical juntion capacitance
I_R = 1.0 mA
I_F = 3.0 A
V_R = 200 V
4.0 V, 1 MHz
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
200 (minimum)
V_F
0.98
0.64
I_R
1.3
0.98
C_J
170
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
1.40
0.72
50
7
-
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200S
Typical thermal resistance ⁽¹⁾
R_θJA
64
R_θJL
18
Note
(1) _{Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB3200S-M3/54
0.399
54
VSB3200S-M3/73
0.399
73
BASE QUANTITY
4000
2000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
3.5
Resistive or Inductive Load
3.0
2.5
2.0
1.5
1.0
14 mm x 14 mm
0.5
Copper Pads
0.375" (9.5 mm) Lead Length
0
0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
2.4
D = 0.8
D = 0.3 ^{D = 0.5}
2.0
D = 0.2
1.6
D = 0.1
D = 1.0
1.2
T
0.8
0.4
D = t_p/T
t_p
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 89143
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Revision: 29-Sep-10