VSB2200S Datasheet, PDF (3/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
VSB2200S
Vishay General Semiconductor
10
T_A = 150 °C
1 ^TA ^{= 125 °C}
0.1
T_A = 100 °C
T_A = 25 °C
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
100
1
T_A = 150 °C
T_A = 125 °C
0.1
T_A = 100 °C
10
0.01
0.001
T_A = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1
0.01
Junction to Ambient
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Document Number: 89142 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
3