VSB2200S Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS^®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 2.0 A
T_J max.
2.0 A
200 V
40 A
0.65 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Maximum repetitive peak reverse voltage
V_RRM
200
Maximum average forward rectified current (fig. 1) ⁽¹⁾
I_F(AV)
2.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_FSM
40
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
10 000
- 40 to + 150
Note
(1) _{Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air}
UNIT
V
A
A
V/µs
°C
Document Number: 89142 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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