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VSB1545 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Photovoltaic Solar Cell Protection Schottky Rectifier
New Product
VSB1545
Vishay General Semiconductor
10
D = 0.5
9
D = 0.3
D = 0.8
8
7
D = 0.2
6
5 D = 0.1
D = 1.0
4
T
3
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100 000
10 000
1000
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
10
TA = 25 °C
1
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
P600
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 89390 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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