VSB1545 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Photovoltaic Solar Cell Protection Schottky Rectifier

New Product
VSB1545
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low V_F = 0.33 V at I_F = 5.0 A
TMBS^®
P600
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
I_F(AV)
15 A
V_RRM
45 V
I_FSM
200 A
V_F at I_F = 15 A
0.44 V
T_OP max.
150 °C
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(AV) ⁽¹⁾
I_F(AV) ⁽²⁾
I_FSM
Operating junction temperature range
Storage temperature range
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h (fig. 2)
T_OP
T_STG
T_J ⁽³⁾
Notes
(1) _{With heatsink}
(2) _{Without heatsink, free air}
(3) _{Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test}
VSB1545
V1545
45
15
6
200
- 40 to + 150
- 40 to + 175
≤ 200
UNIT
V
A
A
°C
°C
°C
Document Number: 89390 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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