VS-VSKU41 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Industrial standard package

VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
P_GM
P_G(AV)
I_GM
- V_GM
V_GT
I_GT
V_GD
I_GD
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
10
W
2.5
2.5
A
10
T_J = - 40 °C
4.0
Anode supply = 6 V
V
T_J = 25 °C
resistive load
2.5
T_J = 125 °C
1.7
T_J = - 40 °C
270
Anode supply = 6 V
T_J = 25 °C
resistive load
150
mA
T_J = 125 °C
80
T_J = 125 °C, rated V_DRM applied
0.25
V
T_J = 125 °C, rated V_DRM applied
6
mA
BLOCKING
PARAMETER
Maximum peak reverse and off-state 
leakage current at V_RRM, V_DRM
SYMBOL
I_RRM,
I_DRM
TEST CONDITIONS
T_J = 125 °C, gate open circuit
Maximum RMS insulation voltage
V_INS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt T_J = 125 °C, linear to 0.67 V_DRM
VS-VSK.41 VS-VSK.56 UNITS
15
mA
3000 (1 min)
3600 (1 s)
1000
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
T_J, T_Stg
R_thJC
R_thCS
to heatsink
Mounting torque ± 10 %
busbar
DC operation
Mounting surface flat, smooth and
greased
A mounting compound is recommended
and the torque should be rechecked after
a period of
3 hours to allow for the spread of the
compound.
-40 to 125
0.44
0.35
0.1
4
3
°C
°C/W
Nm
Approximate weight
75
g
2.7
oz.
Case style
JEDEC^®
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
VSK.41..
0.110 0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
VSK.56..
0.088 0.104 0.134 0.184 0.273
0.07
0.111
0.143
0.189
0.275
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
°C/W
Revision: 24-Mar-14
3
Document Number: 94653
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