|
VS-VSKU41 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Industrial standard package | |||
|
◁ |
VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
04
VS-VSK.41ï
08
VS-VSK.56
12
16
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
900
1300
1700
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
800
1200
1600
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
Maximum average on-state
180° conduction, half sine wave,ï
current
IT(AV)
TC = 85 °C
45
Maximum continuous RMSï
DC
70
on-state current
IT(RMS)
TC
82
Maximum peak, one-cycle
non-repetitive on-state current
t = 10 ms
t = 8.3 ms
ITSM
t = 10 ms
t = 8.3 ms
No voltageï
850
reapplied
Sinusoidalï
890
half wave,ï
100 % VRRMï initial TJ = TJ maximum
715
reapplied
750
60
A
95
81
°C
1200
1256
A
1000
1056
Maximum I2t for fusing
t = 10 ms
No voltageï
3.61
t = 8.3 ms
reapplied
3.30
I2t
Initial TJ = TJ maximum
t = 10 ms
100 % VRRMï
2.56
t = 8.3 ms
reapplied
2.33
7.20
6.57
5.10
4.56
kA2s
Maximum I2ït for fusing
Maximum value of threshold
voltage
I2ït (1)
VT(TO) (2)
t = 0.1 ms to 10 ms, no voltage reapplied ï
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
36.1
72
kA2ïs
1.08
0.91
V
1.12
1.02
Maximum value of on-state ï
slope resistance
Low level (3)
rt (2)
High level (4)
TJ = TJ maximum
4.7
4.27
mï
4.5
3.77
Maximum on-state voltage drop
Maximum non-repetitive rate of
rise of turned on current
Maximum holding current
Maximum latching current
VTM
dI/dt
IH
IL
ITM = ï° x IT(AV) TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM,ï
ITM = ï° x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,ï
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
1.81
1.7
150
200
400
V
A/μs
mA
Notes
(1) I2t for time tx = I2ït x ïtx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x ï° x IAV < I < ï° x IAV
(4) I > ï° x IAV
Revision: 24-Mar-14
2
Document Number: 94653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |