VS-VSKS500 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Electrically isolated base plate

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VS-VSKS500/08PbF
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum holding current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
P_GM
P_G(AV)
I_GM
V_GT
I_GT
I_H
+V_GM
-V_GM
DC gate voltage not to trigger
V_GD
DC gate current not to trigger
I_GD
Maximum non-repetitive rate of rise of
turned-on current
dI/dt
TEST CONDITIONS
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = 25 °C
Anode supply: 12 V resistive load
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum
Maximum gate current/voltage not to trigger is
the maximum value which will not trigger any
unit with rated V_DRM anode to cathode applied
Gate drive 20 V, 20 , t_r  1 μs
T_J = T_J maximum, anode voltage  80 % V_DRM,
I_t = 400 A
VALUES
10.0
2.0
3.0
3
200
600
20
5.0
0.30
10
1000
UNITS
W
A
V
mA
V
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
T_J, T_Stg
R_thJC
DC operation
R_thCS Mounting surface smooth, flat and greased
Mounting
torque ± 10 %
MAP Block to heatsink
busbar to MAP Block
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 h to allow for the spread of the compound.
Lubricated threads.
Approximate weight
Case style
VALUES
- 40 to 130
UNITS
°C
0.08
K/W
0.035
6 to 8
Nm
12 to 15
430
g
15.3
oz.
MAP Block Power
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T_J MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
VS-VSKS500
0.013 0.0148 0.018 0.026 0.044 0.082 0.0142 0.019 0.027 0.044
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC

UNITS
K/W
Revision: 19-Dec-13
3
Document Number: 93160
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