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| VS-VSKS500 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Electrically isolated base plate | |||
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www.vishay.com
VS-VSKS500/08PbF
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state currentï
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle ï
on-state, non-repetitive ï
surge current
Maximum I2t for fusing
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-stateï
slope resistance
High level value on-stateï
slope resistance
Maximum on-state voltage drop
SWITCHING
PARAMETER
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise ofï
off-state voltage
Maximum peak reverse and off-state
leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
I2ït
VT(TO)1
VT(TO)2
rt1
180° conduction half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
No voltageï
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
No voltageï
reapplied
Sine half wave,ï
initial TJ =ï
TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ maximum
(I > ï° x IT(AV)), TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ maximum
rt2
(I > ï° x IT(AV)), TJ maximum
VTM
TJ = 25 °C, 500 A Ipk
VALUES
500
76
785
16 646
17 430
14 000
14 658
1385
1265
894
894
1385
0.6839
0.7598
0.393
0.389
1.1
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
V
SYMBOL
td
tq
TEST CONDITIONS
Gate current 1 A, dIg/dt = 1 A/μsï
Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 Vï
dV/dt = 20 V/μs, Gate 0 V 100 ï, tp = 500 μs
VALUES
1.3
200
UNITS
μs
SYMBOL
TEST CONDITIONS
dV/dt
IDRM,
IRRM
VINS
TJ = TJ maximum linear to 67 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
500
UNITS
V/μs
80
mA
3000
V
Revision: 19-Dec-13
2
Document Number: 93160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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