VS-VSK.166PBF Datasheet, PDF (3/13 Pages) Vishay Siliconix – Industrial standard package

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T_J MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
VSK.166
0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089
VSK.196
0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054
VSK.236
0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC


UNITS
K/W
150
VSK.166.. Series
140
R_thJC (DC) = 0.20 K/W
130
Ø
120
Conduction angle
110
100
30°
60°
90
90°
120°
80
180°
70
0
40
80
120
160
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
250
180°
120°
200
90°
60°
30°
150
RMS limit
100
Ø
Conduction angle
50
VSK.166.. Series
T_J = 150 °C
0
0
40
80
120
160
200
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
150
VSK.166.. Series
140
R_thJC (DC) = 0.20 K/W
130
Ø
120
Conduction period
110
100
90
80
70
0
30°
60°
90°
120°
180°
DC
50 100 150 200 250 300
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
300
DC
180°
250
120°
90°
200
60°
30°
RMS limit
150
Ø
100
Conduction period
50
0
0
VSK.166.. Series
Per junction
T_J = 150 °C
50 100 150 200 250 300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 29-Sep-15
3
Document Number: 94357
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