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| VS-VSK.166PBF Datasheet, PDF (2/13 Pages) Vishay Siliconix – Industrial standard package | |||
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state ï
current at case temperature
Maximum RMS on-state current
IF(AV)
IF(RMS)
Maximum peak, one-cycle
on-state, non-repetitive ï
IFSM
surge current
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-stateï
slope resistance
High level value on-stateï
I2ït
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
180° conduction, half sine wave
165
195
230
100
100
100
260
305
360
t = 10 ms
t = 8.3 ms
No voltageï
reapplied
4000
4200
4750
4980
5500
5765
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
No voltageï
reapplied
Sine half wave,ï
initial TJ =ï
TJ maximum
3350
3500
80
73
4000
4200
113
103
4630
4850
151
138
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
56
80
107
52
73
98
t = 0.1 ms to 10 ms, no voltage reapplied
798
1130 1516
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ maximum
(I > ï° x IF(AV)), TJ maximum
0.73
0.88
0.69
0.78
0.7
0.83
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ maximum 1.5
1.3
1.2
(I > ï° x IF(AV)), TJ maximum
IFM = ï° x IF(AV), TJ = 25 °C, 180° conductionï
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.26
1.43
1.2
1.38
1.07
1.46
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
V
BLOCKING
PARAMETER
Maximum peak reverse andï
off-state leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236 UNITS
IRRM
TJ = 150 °C
20
mA
50 Hz, circuit to base, all terminals shorted,ï
VINS
t=1s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
Maximum junction operating and
storage temperature range
Maximum thermal resistance,ï
junction to case per junction
Maximum thermal resistance,ï
case to heatsink per module
TJ, TStg
RthJC DC operation
RthCS Mounting surface smooth, flat and greased
-40 to +150
0.2
0.16
0.14
0.05
Mountingï
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread ofï
the compound. Lubricated threads.
4 to 6
200
7.1
Case style
INT-A-PAK
UNITS
°C
K/W
Nm
g
oz.
Revision: 29-Sep-15
2
Document Number: 94357
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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