VS-UFB80FA40 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Two fully independent diodes

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10
VS-UFB80FA40
Vishay Semiconductors
1
0.1
0.01
0.0001
DC
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics (Per Leg)
175
150
125
100
DC
75
50 ^{Square Wave (D = 0.5)}
Rated V_R applied
25
0
0
20
40
60
80 100 120
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
150
140
I_f = 30 A
V_rr = 100 V
130
120
110
100
T_J = 125 °C
90
80
70
T_J = 25 °C
60
50
100
1000
dI_F/dt (ns)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
90
80
70
RMS Limit
60
50
40
D = 0.05
30
D = 0.10
20
D = 0.20
DC
D = 0.33
10
D = 0.50
0
0 10 20 30 40 50 60 70 80
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
2400
2000
I_f = 30 A
V_rr = 100 V
1600
1200
T_J = 125 °C
800
400
0
100
T_J = 25 °C
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 31-May-16
3
Document Number: 93620
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