VS-UFB80FA40 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Two fully independent diodes

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VS-UFB80FA40
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
32
t_rr
T_J = 25 °C
-
68
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
125
I_F = 30 A
-
6.8
dI_F/dt = 200 A/μs
-
15
V_R = 200 V
-
215
-
900
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
1.0
-
0.50
0.10
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
1000
100
T_J = 175 °C
10
T_J = 25 °C
1
0
0.5
1
1.5
2
2.5
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
1000
100
T_J = 175 °C
10
1
0.1
0.01
T_J = 25 °C
0.001
0
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
100
T_J = 25 °C
10
1
10
100
1000
Reverse Voltage-V_R (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 31-May-16
2
Document Number: 93620
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